TN0106N3-G-P013
Microchip Technology
Microchip Technology
MOSFET N-CH 60V 350MA TO92-3
$0.92
Available to order
Reference Price (USD)
2,000+
$0.63860
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
For cutting-edge Transistors - FETs, MOSFETs - Single solutions, choose TN0106N3-G-P013 by Microchip Technology. A key player in Discrete Semiconductor Products, this MOSFET boasts low RDS(on), high current capacity, and excellent switching characteristics. Its applications span across telecom infrastructure, medical devices, and consumer electronics. Elevate your designs with TN0106N3-G-P013 inquire now for more details!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60 V
- Current - Continuous Drain (Id) @ 25°C: 350mA (Tj)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Rds On (Max) @ Id, Vgs: 3Ohm @ 500mA, 10V
- Vgs(th) (Max) @ Id: 2V @ 500µA
- Gate Charge (Qg) (Max) @ Vgs: -
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 60 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 1W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-92-3
- Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Related Products
Diodes Incorporated
DMT10H032LSS-13
Harris Corporation
IRF341
Vishay Siliconix
IRLZ14SPBF
Infineon Technologies
IRFS4127TRLPBF
Infineon Technologies
BSZ024N04LS6ATMA1
Vishay Siliconix
SQJQ410EL-T1_GE3
Renesas Electronics America Inc
UPA2718AGR-E1-AT
onsemi
FCB290N80
onsemi
NVMFS6H824NLT1G
Nexperia USA Inc.