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TK8Q60W,S1VQ

Toshiba Semiconductor and Storage
TK8Q60W,S1VQ Preview
Toshiba Semiconductor and Storage
MOSFET N-CH 600V 8A IPAK
$2.00
Available to order
Reference Price (USD)
75+
$1.82000
Exquisite packaging
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Specifications

  • Product Status: Active
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600 V
  • Current - Continuous Drain (Id) @ 25°C: 8A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Rds On (Max) @ Id, Vgs: 500mOhm @ 4A, 10V
  • Vgs(th) (Max) @ Id: 3.7V @ 400µA
  • Gate Charge (Qg) (Max) @ Vgs: 18.5 nC @ 10 V
  • Vgs (Max): ±30V
  • Input Capacitance (Ciss) (Max) @ Vds: 570 pF @ 300 V
  • FET Feature: Super Junction
  • Power Dissipation (Max): 80W (Tc)
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: I-Pak
  • Package / Case: TO-251-3 Stub Leads, IPak

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