TK6Q60W,S1VQ
Toshiba Semiconductor and Storage
Toshiba Semiconductor and Storage
MOSFET N-CH 600V 6.2A IPAK
$1.61
Available to order
Reference Price (USD)
75+
$1.46253
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
For cutting-edge Transistors - FETs, MOSFETs - Single solutions, choose TK6Q60W,S1VQ by Toshiba Semiconductor and Storage. A key player in Discrete Semiconductor Products, this MOSFET boasts low RDS(on), high current capacity, and excellent switching characteristics. Its applications span across telecom infrastructure, medical devices, and consumer electronics. Elevate your designs with TK6Q60W,S1VQ inquire now for more details!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600 V
- Current - Continuous Drain (Id) @ 25°C: 6.2A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 820mOhm @ 3.1A, 10V
- Vgs(th) (Max) @ Id: 3.7V @ 310µA
- Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
- Vgs (Max): ±30V
- Input Capacitance (Ciss) (Max) @ Vds: 390 pF @ 300 V
- FET Feature: Super Junction
- Power Dissipation (Max): 60W (Tc)
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: I-Pak
- Package / Case: TO-251-3 Stub Leads, IPak
Related Products
Infineon Technologies
BUZ30A H3045A
Alpha & Omega Semiconductor Inc.
AOSP66923
onsemi
FQB7P20TM
IXYS
IXFT50N60X
Diodes Incorporated
ZXMN2B01FTA
Diodes Incorporated
DMN2025UFDF-7
onsemi
SFT1345-H
onsemi
2SK583
Microchip Technology
VN4012L-G
Vishay Siliconix