TJ40S04M3L(T6L1,NQ
Toshiba Semiconductor and Storage
Toshiba Semiconductor and Storage
MOSFET P-CH 40V 40A DPAK
$0.69
Available to order
Reference Price (USD)
2,000+
$0.63000
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Enhance your circuit performance with TJ40S04M3L(T6L1,NQ, a premium Transistors - FETs, MOSFETs - Single from Toshiba Semiconductor and Storage. As part of the Discrete Semiconductor Products lineup, this MOSFET excels in delivering high-speed switching and low power consumption. Its advanced design reduces heat generation and improves efficiency, suitable for power supplies, motor controls, and LED lighting. Trust TJ40S04M3L(T6L1,NQ for consistent quality and long-lasting performance. For bulk orders or custom specifications, reach out to our sales team today!
Specifications
- Product Status: Active
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 40 V
- Current - Continuous Drain (Id) @ 25°C: 40A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
- Rds On (Max) @ Id, Vgs: 9.1mOhm @ 20A, 10V
- Vgs(th) (Max) @ Id: 3V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 83 nC @ 10 V
- Vgs (Max): +10V, -20V
- Input Capacitance (Ciss) (Max) @ Vds: 4140 pF @ 10 V
- FET Feature: -
- Power Dissipation (Max): 68W (Tc)
- Operating Temperature: 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: DPAK+
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Related Products
Toshiba Semiconductor and Storage
TK040N65Z,S1F
Vishay Siliconix
IRF530PBF
Nexperia USA Inc.
BUK9Y153-100E,115
Infineon Technologies
IRFR120NPBF
IXYS
IXTA200N055T2-TRL
Vishay Siliconix
SI7414DN-T1-E3
STMicroelectronics
STD18N60M6
Alpha & Omega Semiconductor Inc.
AO4425
Nexperia USA Inc.
PSMN1R8-30PL,127
Vishay Siliconix