TBB1012MMTL-H
Renesas Electronics America Inc
Renesas Electronics America Inc
RF N-CHANNEL MOSFET
$0.29
Available to order
Reference Price (USD)
1+
$0.29000
500+
$0.2871
1000+
$0.2842
1500+
$0.2813
2000+
$0.2784
2500+
$0.2755
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Optimize your electronic systems with TBB1012MMTL-H, a high-quality Transistors - FETs, MOSFETs - Single from Renesas Electronics America Inc. This Discrete Semiconductor Products component is built for reliability, featuring enhanced thermal stability and fast response times. Perfect for automotive electronics, power tools, and IoT devices, TBB1012MMTL-H provides efficient power management solutions. Contact us today to discuss your requirements and place an order!
Specifications
- Product Status: Active
- FET Type: -
- Technology: -
- Drain to Source Voltage (Vdss): -
- Current - Continuous Drain (Id) @ 25°C: -
- Drive Voltage (Max Rds On, Min Rds On): -
- Rds On (Max) @ Id, Vgs: -
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: -
- Vgs (Max): -
- Input Capacitance (Ciss) (Max) @ Vds: -
- FET Feature: -
- Power Dissipation (Max): -
- Operating Temperature: -
- Mounting Type: -
- Supplier Device Package: -
- Package / Case: -
Related Products
onsemi
EMH1303-TL-E
STMicroelectronics
SCT20N120H
Infineon Technologies
BSD314SPE L6327
Nexperia USA Inc.
BUK9628-100A,118
Vishay Siliconix
SQ2318AES-T1_BE3
Microchip Technology
TN0620N3-G-P002
Microchip Technology
2N6660
STMicroelectronics
STB11NK40ZT4
Vishay Siliconix
SIRS700DP-T1-GE3
IXYS