SVC236-TB-E
Sanyo

Sanyo
DIFFUSED JUNCTION TYPE SILICON V
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The SVC236-TB-E from Sanyo sets new benchmarks in varicap diode efficiency, featuring patented junction designs for ultra-low distortion in high-power RF amplifiers. Applications span from amateur radio to quantum computing peripherals, backed by Sanyo's ISO 9001-certified production. We provide cross-reference assistance and counterfeit protection guarantees. Your innovation deserves authentic components submit your inquiry before midnight for same-day response!
Specifications
- Product Status: Active
- Capacitance @ Vr, F: 16.84pF @ 6.5V, 1MHz
- Capacitance Ratio: 5
- Capacitance Ratio Condition: C1/C6.5
- Voltage - Peak Reverse (Max): 16 V
- Diode Type: 1 Pair Common Cathode
- Q @ Vr, F: 70 @ 3V, 100MHz
- Operating Temperature: 125°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: 3-CP