SUM50010E-GE3
Vishay Siliconix
Vishay Siliconix
MOSFET N-CH 60V 150A TO263
$3.85
Available to order
Reference Price (USD)
1+
$4.07000
10+
$3.63100
100+
$2.97730
800+
$2.17850
1,600+
$2.03326
3,200+
$1.93160
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Optimize your electronic systems with SUM50010E-GE3, a high-quality Transistors - FETs, MOSFETs - Single from Vishay Siliconix. This Discrete Semiconductor Products component is built for reliability, featuring enhanced thermal stability and fast response times. Perfect for automotive electronics, power tools, and IoT devices, SUM50010E-GE3 provides efficient power management solutions. Contact us today to discuss your requirements and place an order!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60 V
- Current - Continuous Drain (Id) @ 25°C: 150A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
- Rds On (Max) @ Id, Vgs: 1.75mOhm @ 30A, 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 212 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 10895 pF @ 30 V
- FET Feature: -
- Power Dissipation (Max): 375W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TO-263 (D²Pak)
- Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Related Products
Vishay Siliconix
SIHB22N60E-E3
Infineon Technologies
AUIRL3705ZS
IXYS
IXFT24N80P
Vishay Siliconix
SI7812DN-T1-E3
Diodes Incorporated
ZXMN6A11ZTA
Nexperia USA Inc.
PSMN028-100YS,115
Vishay Siliconix
IRL620PBF
onsemi
NTLUS4C16NTBG
Infineon Technologies
IRF9530NPBF
Infineon Technologies