STY100NM60N
STMicroelectronics
STMicroelectronics
MOSFET N CH 600V 98A MAX247
$0.00
Available to order
Reference Price (USD)
1+
$27.13000
30+
$23.38300
120+
$21.88467
510+
$19.38751
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Discover STY100NM60N, a versatile Transistors - FETs, MOSFETs - Single solution from STMicroelectronics, a trusted name in Discrete Semiconductor Products. This MOSFET combines high power density with low on-resistance, perfect for compact and energy-efficient designs. Applications include solar inverters, electric vehicles, and wearable technology. Interested in this innovative component? Send us your inquiry now for more information!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600 V
- Current - Continuous Drain (Id) @ 25°C: 98A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 29mOhm @ 49A, 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 330 nC @ 10 V
- Vgs (Max): 25V
- Input Capacitance (Ciss) (Max) @ Vds: 9600 pF @ 50 V
- FET Feature: -
- Power Dissipation (Max): 625W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: MAX247™
- Package / Case: TO-247-3
Related Products
IXYS
IXTF250N075T
STMicroelectronics
STI200N6F3
Fairchild Semiconductor
SI3441DV
Alpha & Omega Semiconductor Inc.
AOI510
Vishay Siliconix
SI5410DU-T1-GE3
onsemi
NTD6600N-001
Vishay Siliconix
SI7440DP-T1-E3
Vishay Siliconix
SI5855DC-T1-E3
Vishay Siliconix
SI1470DH-T1-GE3
Infineon Technologies