STW70N65M2
STMicroelectronics
STMicroelectronics
MOSFET N-CH 650V 63A TO247-3
$9.99
Available to order
Reference Price (USD)
600+
$9.01175
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Discover high-performance STW70N65M2 from STMicroelectronics, a leading solution in the Discrete Semiconductor Products category. Our Transistors - FETs, MOSFETs - Single are designed for efficiency and reliability, making them ideal for various electronic applications. These components feature low on-resistance, fast switching speeds, and excellent thermal performance, ensuring optimal functionality in power management and amplification circuits. Commonly used in automotive, industrial, and consumer electronics, STW70N65M2 delivers consistent performance under demanding conditions. Interested in learning more? Contact us today for a detailed quote and technical support!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 650 V
- Current - Continuous Drain (Id) @ 25°C: 63A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 46mOhm @ 31.5A, 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 117 nC @ 10 V
- Vgs (Max): ±25V
- Input Capacitance (Ciss) (Max) @ Vds: 5140 pF @ 100 V
- FET Feature: -
- Power Dissipation (Max): 446W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-247-3
- Package / Case: TO-247-3
Related Products
STMicroelectronics
STB32NM50N
STMicroelectronics
STW30N65M5
Infineon Technologies
IPW60R040C7XKSA1
Vishay Siliconix
IRFBE30STRLPBF
Infineon Technologies
BUZ31HXKSA1
Diodes Incorporated
DMN2029UVT-7
onsemi
NTJS4405NT4G
STMicroelectronics
STP55NF06
Vishay Siliconix
IRFR210PBF-BE3
Diodes Incorporated