STW69N65M5
STMicroelectronics
STMicroelectronics
MOSFET N-CH 650V 58A TO247
$20.54
Available to order
Reference Price (USD)
1+
$21.51000
30+
$18.09100
120+
$16.62433
510+
$14.17955
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Boost your electronic applications with STW69N65M5, a reliable Transistors - FETs, MOSFETs - Single by STMicroelectronics. As a leader in Discrete Semiconductor Products, we offer components with low gate charge, high breakdown voltage, and excellent switching performance. Whether for aerospace, robotics, or energy systems, STW69N65M5 meets the highest standards. Contact our team today for expert advice and competitive pricing!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 650 V
- Current - Continuous Drain (Id) @ 25°C: 58A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 45mOhm @ 29A, 10V
- Vgs(th) (Max) @ Id: 5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 143 nC @ 10 V
- Vgs (Max): ±25V
- Input Capacitance (Ciss) (Max) @ Vds: 6420 pF @ 100 V
- FET Feature: -
- Power Dissipation (Max): 330W (Tc)
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-247-3
- Package / Case: TO-247-3
Related Products
Alpha & Omega Semiconductor Inc.
AO3435
Fairchild Semiconductor
IRFS634B
Panjit International Inc.
PJD15P06A_L2_00001
onsemi
NDF04N62ZG
Vishay Siliconix
SQJ128ELP-T1_GE3
STMicroelectronics
STF16N60M2
STMicroelectronics
STP16N65M5
Vishay Siliconix
SI3424CDV-T1-GE3
Panjit International Inc.
PJQ4407P_R1_00001
Infineon Technologies