Shopping cart

Subtotal: $0.00

STW60NE10

STMicroelectronics
STW60NE10 Preview
STMicroelectronics
MOSFET N-CH 100V 60A TO247-3
$0.00
Available to order
Reference Price (USD)
300+
$4.27350
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram

Specifications

  • Product Status: Obsolete
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100 V
  • Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Rds On (Max) @ Id, Vgs: 22mOhm @ 30A, 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 185 nC @ 10 V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 5300 pF @ 25 V
  • FET Feature: -
  • Power Dissipation (Max): 180W (Tc)
  • Operating Temperature: 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-247-3
  • Package / Case: TO-247-3

Related Products

Infineon Technologies

IRF3709STRLPBF-INF

Infineon Technologies

IRLR8503

Diodes Incorporated

DMG3413L-7

Diodes Incorporated

DMG4468LFG-7

Infineon Technologies

IRF1405Z

Vishay Siliconix

SIR864DP-T1-GE3

Vishay Siliconix

SI2305DS-T1-E3

Toshiba Semiconductor and Storage

TPC8036-H(TE12L,QM

Top