STW28NM60ND
STMicroelectronics
STMicroelectronics
MOSFET N-CH 600V 23A TO247
$7.28
Available to order
Reference Price (USD)
1+
$7.54000
30+
$6.27133
120+
$5.70708
510+
$4.86069
1,020+
$4.29638
2,520+
$4.15530
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Boost your electronic applications with STW28NM60ND, a reliable Transistors - FETs, MOSFETs - Single by STMicroelectronics. As a leader in Discrete Semiconductor Products, we offer components with low gate charge, high breakdown voltage, and excellent switching performance. Whether for aerospace, robotics, or energy systems, STW28NM60ND meets the highest standards. Contact our team today for expert advice and competitive pricing!
Specifications
- Product Status: Obsolete
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600 V
- Current - Continuous Drain (Id) @ 25°C: 23A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 150mOhm @ 11.5A, 10V
- Vgs(th) (Max) @ Id: 5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 62.5 nC @ 10 V
- Vgs (Max): ±25V
- Input Capacitance (Ciss) (Max) @ Vds: 2090 pF @ 100 V
- FET Feature: -
- Power Dissipation (Max): 190W (Tc)
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-247-3
- Package / Case: TO-247-3
Related Products
Vishay Siliconix
SQJQ160E-T1_GE3
Goford Semiconductor
G110N06T
Taiwan Semiconductor Corporation
TSM180N03CS RLG
Vishay Siliconix
SIHB068N60EF-GE3
Yangzhou Yangjie Electronic Technology Co.,Ltd
YJL03G10A-F2-0000HF
Vishay Siliconix
SIHP21N80AE-GE3
Sanyo
FW905-TL-E
Vishay Siliconix
SI3127DV-T1-GE3
Vishay Siliconix
IRF840ASPBF
Nexperia USA Inc.