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STPSC10H065G2-TR

STMicroelectronics
STPSC10H065G2-TR Preview
STMicroelectronics
650 V, 10 A HIGH SURGE SILICON C
$3.83
Available to order
Reference Price (USD)
1+
$3.83000
500+
$3.7917
1000+
$3.7534
1500+
$3.7151
2000+
$3.6768
2500+
$3.6385
Exquisite packaging
Discount
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Specifications

  • Product Status: Active
  • Diode Type: Silicon Carbide Schottky
  • Voltage - DC Reverse (Vr) (Max): 650 V
  • Current - Average Rectified (Io): 10A
  • Voltage - Forward (Vf) (Max) @ If: 1.75 V @ 10 A
  • Speed: No Recovery Time > 500mA (Io)
  • Reverse Recovery Time (trr): 0 ns
  • Current - Reverse Leakage @ Vr: 100 µA @ 650 V
  • Capacitance @ Vr, F: 480pF @ 0V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
  • Supplier Device Package: D²PAK
  • Operating Temperature - Junction: -40°C ~ 175°C

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