STP9NM60N
STMicroelectronics
STMicroelectronics
MOSFET N-CH 600V 6.5A TO220AB
$2.83
Available to order
Reference Price (USD)
1+
$2.60000
50+
$2.11680
100+
$1.91880
500+
$1.52280
1,000+
$1.28520
2,500+
$1.20600
5,000+
$1.16640
Exquisite packaging
Discount
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Discover STP9NM60N, a versatile Transistors - FETs, MOSFETs - Single solution from STMicroelectronics, a trusted name in Discrete Semiconductor Products. This MOSFET combines high power density with low on-resistance, perfect for compact and energy-efficient designs. Applications include solar inverters, electric vehicles, and wearable technology. Interested in this innovative component? Send us your inquiry now for more information!
Specifications
- Product Status: Not For New Designs
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600 V
- Current - Continuous Drain (Id) @ 25°C: 6.5A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 745mOhm @ 3.25A, 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 17.4 nC @ 10 V
- Vgs (Max): ±25V
- Input Capacitance (Ciss) (Max) @ Vds: 452 pF @ 50 V
- FET Feature: -
- Power Dissipation (Max): 70W (Tc)
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220
- Package / Case: TO-220-3
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