STP8N120K5
STMicroelectronics
STMicroelectronics
MOSFET N-CH 1200V 6A TO220
$7.51
Available to order
Reference Price (USD)
1+
$7.36000
50+
$5.99640
100+
$5.50130
500+
$4.53600
1,000+
$3.89250
2,500+
$3.71925
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
For cutting-edge Transistors - FETs, MOSFETs - Single solutions, choose STP8N120K5 by STMicroelectronics. A key player in Discrete Semiconductor Products, this MOSFET boasts low RDS(on), high current capacity, and excellent switching characteristics. Its applications span across telecom infrastructure, medical devices, and consumer electronics. Elevate your designs with STP8N120K5 inquire now for more details!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 1200 V
- Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 2Ohm @ 2.5A, 10V
- Vgs(th) (Max) @ Id: 5V @ 100µA
- Gate Charge (Qg) (Max) @ Vgs: 13.7 nC @ 10 V
- Vgs (Max): -
- Input Capacitance (Ciss) (Max) @ Vds: 505 pF @ 100 V
- FET Feature: -
- Power Dissipation (Max): 130W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220
- Package / Case: TO-220-3
Related Products
Vishay Siliconix
SIHP18N60E-GE3
NXP USA Inc.
BSP225/S911115
GeneSiC Semiconductor
G2R1000MT17J
Toshiba Semiconductor and Storage
SSM6P16FE(TE85L,F)
Infineon Technologies
IPB090N06N3GATMA1
Infineon Technologies
IPB65R110CFDAATMA1
Fairchild Semiconductor
FQI4N90TU
Vishay Siliconix
SI4134DY-T1-GE3
STMicroelectronics
STP9NK70ZFP
onsemi