STP50N60DM6
STMicroelectronics
STMicroelectronics
MOSFET N-CH 600V 36A TO220
$6.65
Available to order
Reference Price (USD)
1+
$6.65000
500+
$6.5835
1000+
$6.517
1500+
$6.4505
2000+
$6.384
2500+
$6.3175
Exquisite packaging
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For cutting-edge Transistors - FETs, MOSFETs - Single solutions, choose STP50N60DM6 by STMicroelectronics. A key player in Discrete Semiconductor Products, this MOSFET boasts low RDS(on), high current capacity, and excellent switching characteristics. Its applications span across telecom infrastructure, medical devices, and consumer electronics. Elevate your designs with STP50N60DM6 inquire now for more details!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600 V
- Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 80mOhm @ 18A, 10V
- Vgs(th) (Max) @ Id: 4.75V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V
- Vgs (Max): ±25V
- Input Capacitance (Ciss) (Max) @ Vds: 2350 pF @ 100 V
- FET Feature: -
- Power Dissipation (Max): 250W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220
- Package / Case: TO-220-3
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