STI12N65M5
STMicroelectronics
STMicroelectronics
MOSFET N-CH 650V 8.5A I2PAK
$0.00
Available to order
Reference Price (USD)
1+
$0.00000
500+
$0
1000+
$0
1500+
$0
2000+
$0
2500+
$0
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Enhance your circuit performance with STI12N65M5, a premium Transistors - FETs, MOSFETs - Single from STMicroelectronics. As part of the Discrete Semiconductor Products lineup, this MOSFET excels in delivering high-speed switching and low power consumption. Its advanced design reduces heat generation and improves efficiency, suitable for power supplies, motor controls, and LED lighting. Trust STI12N65M5 for consistent quality and long-lasting performance. For bulk orders or custom specifications, reach out to our sales team today!
Specifications
- Product Status: Obsolete
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 650 V
- Current - Continuous Drain (Id) @ 25°C: 8.5A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 430mOhm @ 4.3A, 10V
- Vgs(th) (Max) @ Id: 5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
- Vgs (Max): ±25V
- Input Capacitance (Ciss) (Max) @ Vds: 900 pF @ 100 V
- FET Feature: -
- Power Dissipation (Max): 70W (Tc)
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: I2PAK
- Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Related Products
Rohm Semiconductor
R6010ANX
IXYS
IXTQ60N30T
Fairchild Semiconductor
FQAF16N25C
Toshiba Semiconductor and Storage
2SK3127(TE24L,Q)
IXYS
IXTA2N80
Diodes Incorporated
ZVP0120ASTOA
Nexperia USA Inc.
PMPB40SNA,115
Fairchild Semiconductor
FQP14N15
Infineon Technologies
IRF6708S2TRPBF
Infineon Technologies