STH310N10F7-6
STMicroelectronics
STMicroelectronics
MOSFET N-CH 100V 180A H2PAK-6
$7.21
Available to order
Reference Price (USD)
1,000+
$4.38850
2,000+
$4.24440
Exquisite packaging
Discount
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Boost your electronic applications with STH310N10F7-6, a reliable Transistors - FETs, MOSFETs - Single by STMicroelectronics. As a leader in Discrete Semiconductor Products, we offer components with low gate charge, high breakdown voltage, and excellent switching performance. Whether for aerospace, robotics, or energy systems, STH310N10F7-6 meets the highest standards. Contact our team today for expert advice and competitive pricing!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100 V
- Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 2.5mOhm @ 60A, 10V
- Vgs(th) (Max) @ Id: 3.8V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 180 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 12800 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 315W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: H2PAK-6
- Package / Case: TO-263-7, D²Pak (6 Leads + Tab)
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