STGWA60H65DFB
STMicroelectronics
STMicroelectronics
IGBT BIPO 650V 60A TO247-3
$0.00
Available to order
Reference Price (USD)
1+
$5.95000
30+
$5.10500
120+
$4.47500
510+
$3.86600
1,020+
$3.32000
2,520+
$3.18000
Exquisite packaging
Discount
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The STGWA60H65DFB Single IGBT from STMicroelectronics redefines reliability in power electronics. Tailored for renewable energy, telecom, and defense applications, it offers ultra-low switching losses and high-frequency operation. With anti-parallel diodes and short-circuit ratings, it s built for safety and performance. STMicroelectronics stands behind every STGWA60H65DFB with unmatched customer service. Start your order process by contacting our sales team today!
Specifications
- Product Status: Active
- IGBT Type: Trench Field Stop
- Voltage - Collector Emitter Breakdown (Max): 650 V
- Current - Collector (Ic) (Max): 80 A
- Current - Collector Pulsed (Icm): 240 A
- Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 60A
- Power - Max: 375 W
- Switching Energy: 1.59mJ (on), 900µJ (off)
- Input Type: Standard
- Gate Charge: 306 nC
- Td (on/off) @ 25°C: 66ns/210ns
- Test Condition: 400V, 60A, 10Ohm, 15V
- Reverse Recovery Time (trr): 60 ns
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-247-3
- Supplier Device Package: TO-247-3
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