STGWA50IH65DF
STMicroelectronics
STMicroelectronics
TRENCH GATE FIELD-STOP IGBT 650
$3.55
Available to order
Reference Price (USD)
1+
$4.43000
10+
$4.00700
100+
$3.33390
600+
$2.88017
1,200+
$2.47340
3,000+
$2.36910
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The STGWA50IH65DF Single IGBT from STMicroelectronics redefines reliability in power electronics. Tailored for renewable energy, telecom, and defense applications, it offers ultra-low switching losses and high-frequency operation. With anti-parallel diodes and short-circuit ratings, it s built for safety and performance. STMicroelectronics stands behind every STGWA50IH65DF with unmatched customer service. Start your order process by contacting our sales team today!
Specifications
- Product Status: Active
- IGBT Type: Trench Field Stop
- Voltage - Collector Emitter Breakdown (Max): 650 V
- Current - Collector (Ic) (Max): 100 A
- Current - Collector Pulsed (Icm): 150 A
- Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 50A
- Power - Max: 300 W
- Switching Energy: 284µJ (off)
- Input Type: Standard
- Gate Charge: 158 nC
- Td (on/off) @ 25°C: -/260ns
- Test Condition: 400V, 50A, 22Ohm, 15V
- Reverse Recovery Time (trr): -
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-247-3
- Supplier Device Package: TO-247 Long Leads
Related Products
Harris Corporation
HGTP7N60B3D
onsemi
MGP19N35CL
onsemi
STB1081L3
onsemi
FGH30S130P
Infineon Technologies
IKP15N65H5XKSA1
Rohm Semiconductor
RGT50NS65DGTL
Infineon Technologies
IGW40N65F5FKSA1
Infineon Technologies
IGB03N120H2ATMA1
IXYS
IXXX200N60C3
onsemi