STGW60H65DRF
STMicroelectronics
STMicroelectronics
IGBT 650V 120A 420W TO247
$5.45
Available to order
Reference Price (USD)
1+
$9.40000
30+
$8.09333
120+
$7.02742
510+
$6.11939
1,020+
$5.32980
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The STGW60H65DRF Single IGBT from STMicroelectronics delivers unmatched performance in power conversion and control. Ideal for UPS systems, induction heating, and industrial automation, this transistor combines high efficiency with rugged reliability. Features such as short-circuit protection and low EMI make it a standout choice. STMicroelectronics's commitment to innovation ensures STGW60H65DRF meets the demands of modern electronics. Get in touch for bulk orders and customization options!
Specifications
- Product Status: Obsolete
- IGBT Type: Trench Field Stop
- Voltage - Collector Emitter Breakdown (Max): 650 V
- Current - Collector (Ic) (Max): 120 A
- Current - Collector Pulsed (Icm): 240 A
- Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 60A
- Power - Max: 420 W
- Switching Energy: 940µJ (on), 1.06mJ (off)
- Input Type: Standard
- Gate Charge: 217 nC
- Td (on/off) @ 25°C: 85ns/178ns
- Test Condition: 400V, 60A, 10Ohm, 15V
- Reverse Recovery Time (trr): 19 ns
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-247-3
- Supplier Device Package: TO-247-3
Related Products
onsemi
NGB8206NTF4G
IXYS
IXBF32N300
onsemi
ISL9V2040D3STV
IXYS
IXXK200N60C3
onsemi
AFGHL75T65SQD
Infineon Technologies
IKD04N60RATMA1
Infineon Technologies
AIKW75N60CTXKSA1
Infineon Technologies
SGB15N60HSATMA1
IXYS
IXGH48N60B3D1
STMicroelectronics