STFI24NM60N
STMicroelectronics
STMicroelectronics
MOSFET N-CH 600V 17A I2PAKFP
$3.90
Available to order
Reference Price (USD)
1+
$4.53000
50+
$3.63820
100+
$3.31490
500+
$2.68422
1,000+
$2.26380
Exquisite packaging
Discount
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For cutting-edge Transistors - FETs, MOSFETs - Single solutions, choose STFI24NM60N by STMicroelectronics. A key player in Discrete Semiconductor Products, this MOSFET boasts low RDS(on), high current capacity, and excellent switching characteristics. Its applications span across telecom infrastructure, medical devices, and consumer electronics. Elevate your designs with STFI24NM60N inquire now for more details!
Specifications
- Product Status: Obsolete
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600 V
- Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 190mOhm @ 8A, 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 10 V
- Vgs (Max): ±30V
- Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 50 V
- FET Feature: -
- Power Dissipation (Max): 30W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: I2PAKFP (TO-281)
- Package / Case: TO-262-3 Full Pack, I²Pak
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