Shopping cart

Subtotal: $0.00

STFI11NM65N

STMicroelectronics
STFI11NM65N Preview
STMicroelectronics
MOSFET N CH 650V 11A I2PAKFP
$0.00
Available to order
Reference Price (USD)
1+
$0.00000
500+
$0
1000+
$0
1500+
$0
2000+
$0
2500+
$0
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram

Specifications

  • Product Status: Obsolete
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 650 V
  • Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Rds On (Max) @ Id, Vgs: 455mOhm @ 5.5A, 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
  • Vgs (Max): ±25V
  • Input Capacitance (Ciss) (Max) @ Vds: 800 pF @ 50 V
  • FET Feature: -
  • Power Dissipation (Max): 25W (Tc)
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: I2PAKFP (TO-281)
  • Package / Case: TO-262-3 Full Pack, I²Pak

Related Products

Infineon Technologies

IRF7704

Infineon Technologies

IPP06CN10LGXKSA1

Infineon Technologies

SPA11N60C3IN

Infineon Technologies

IRL1404S

Renesas Electronics America Inc

HAT2165H-EL-E

NXP USA Inc.

PHP160NQ08T,127

Rohm Semiconductor

RSS070P05FRATB

Infineon Technologies

SPP20N60C3HKSA1

Diodes Incorporated

ZVN3306ASTOA

Vishay Siliconix

2N6661JTXL02

Top