STD3NM60-1
STMicroelectronics
STMicroelectronics
MOSFET N-CH 600V 3A IPAK
$0.00
Available to order
Reference Price (USD)
3,000+
$0.79596
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
STMicroelectronics presents STD3NM60-1, a high-performance Transistors - FETs, MOSFETs - Single in the Discrete Semiconductor Products category. Designed for efficiency, this component features minimal conduction losses and superior thermal performance, making it ideal for high-frequency applications. From industrial automation to smart home devices, STD3NM60-1 delivers unmatched reliability. Get in touch today for technical specifications and purchasing options!
Specifications
- Product Status: Obsolete
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600 V
- Current - Continuous Drain (Id) @ 25°C: 3A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 1.5Ohm @ 1.5A, 10V
- Vgs(th) (Max) @ Id: 5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V
- Vgs (Max): ±30V
- Input Capacitance (Ciss) (Max) @ Vds: 324 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 42W (Tc)
- Operating Temperature: -65°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: I-PAK
- Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Related Products
Micro Commercial Co
MCU06N40-TP
Infineon Technologies
IPB114N03L G
Infineon Technologies
IRF530NS
Infineon Technologies
IRFBL3703
Infineon Technologies
IPB80N06S2LH5
Vishay Siliconix
SI1037X-T1-E3
Infineon Technologies
IRFH5053TR2PBF
Diodes Incorporated
ZVN2120GTC
Infineon Technologies
BSP320S E6327
Vishay Siliconix