STB75NH02LT4
STMicroelectronics
STMicroelectronics
MOSFET N-CH 24V 60A D2PAK
$1.92
Available to order
Reference Price (USD)
1,000+
$1.16025
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Experience the power of STB75NH02LT4, a premium Transistors - FETs, MOSFETs - Single from STMicroelectronics. Part of the Discrete Semiconductor Products family, this MOSFET is tailored for high-efficiency power conversion and signal amplification. With its rugged construction and advanced technology, STB75NH02LT4 is suited for harsh environments and high-demand applications. Request a quote now to secure this essential component for your projects!
Specifications
- Product Status: Obsolete
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 24 V
- Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
- Rds On (Max) @ Id, Vgs: 8mOhm @ 30A, 10V
- Vgs(th) (Max) @ Id: 1.8V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 5 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 2050 pF @ 15 V
- FET Feature: -
- Power Dissipation (Max): 80W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: D2PAK
- Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Related Products
onsemi
NTP110N65S3HF
Diodes Incorporated
DMN1014UFDF-13
Vishay Siliconix
IRLZ34SPBF
onsemi
NTD4910NT4G
Vishay Siliconix
SQS407ENW-T1_GE3
onsemi
NTMFS4C09NT1G
Toshiba Semiconductor and Storage
TPH9R00CQH,LQ
Infineon Technologies
IAUC100N10S5L040ATMA1
Toshiba Semiconductor and Storage
TK55S10N1,LXHQ
onsemi