STB36NM60N
STMicroelectronics
STMicroelectronics
MOSFET N-CH 600V 29A D2PAK
$4.94
Available to order
Reference Price (USD)
1,000+
$8.33112
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Boost your electronic applications with STB36NM60N, a reliable Transistors - FETs, MOSFETs - Single by STMicroelectronics. As a leader in Discrete Semiconductor Products, we offer components with low gate charge, high breakdown voltage, and excellent switching performance. Whether for aerospace, robotics, or energy systems, STB36NM60N meets the highest standards. Contact our team today for expert advice and competitive pricing!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600 V
- Current - Continuous Drain (Id) @ 25°C: 29A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 105mOhm @ 14.5A, 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 83.6 nC @ 10 V
- Vgs (Max): ±25V
- Input Capacitance (Ciss) (Max) @ Vds: 2722 pF @ 100 V
- FET Feature: -
- Power Dissipation (Max): 210W (Tc)
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: D²PAK (TO-263)
- Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Related Products
Toshiba Semiconductor and Storage
TK1R4S04PB,LXHQ
Renesas Electronics America Inc
3SK323UG-TL-E
IXYS
IXFN70N120SK
Microchip Technology
MSC060SMA070S
Rohm Semiconductor
RCX100N25
STMicroelectronics
STF9NM60N
onsemi
IRF720
onsemi
FQD12P10TM-F085
STMicroelectronics
STW10NK80Z
onsemi