SSM6J512NU,LF
Toshiba Semiconductor and Storage
Toshiba Semiconductor and Storage
MOSFET P-CH 12V 10A 6UDFNB
$0.50
Available to order
Reference Price (USD)
3,000+
$0.13035
6,000+
$0.12245
15,000+
$0.11455
30,000+
$0.11060
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Optimize your electronic systems with SSM6J512NU,LF, a high-quality Transistors - FETs, MOSFETs - Single from Toshiba Semiconductor and Storage. This Discrete Semiconductor Products component is built for reliability, featuring enhanced thermal stability and fast response times. Perfect for automotive electronics, power tools, and IoT devices, SSM6J512NU,LF provides efficient power management solutions. Contact us today to discuss your requirements and place an order!
Specifications
- Product Status: Active
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 12 V
- Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 1.8V, 8V
- Rds On (Max) @ Id, Vgs: 16.2mOhm @ 4A, 8V
- Vgs(th) (Max) @ Id: 1V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 19.5 nC @ 4.5 V
- Vgs (Max): ±10V
- Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 6 V
- FET Feature: -
- Power Dissipation (Max): 1.25W (Ta)
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 6-UDFNB (2x2)
- Package / Case: 6-WDFN Exposed Pad
Related Products
Taiwan Semiconductor Corporation
TSM019NH04CR RLG
Infineon Technologies
IRFB3407ZPBF
Nexperia USA Inc.
BUK7M12-40EX
Renesas Electronics America Inc
2SK3668-ZK-E1-AY
Nexperia USA Inc.
PSMN3R3-40MLHX
STMicroelectronics
STP45N10F7
Microsemi Corporation
APT6017LFLLG
Fairchild Semiconductor
FDMA0104
onsemi
NTTFS5C673NLTWG
STMicroelectronics