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SSM3K01T(TE85L,F)

Toshiba Semiconductor and Storage
SSM3K01T(TE85L,F) Preview
Toshiba Semiconductor and Storage
MOSFET N-CH 30V 3.2A TSM
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Specifications

  • Product Status: Obsolete
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30 V
  • Current - Continuous Drain (Id) @ 25°C: 3.2A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4V
  • Rds On (Max) @ Id, Vgs: 120mOhm @ 1.6A, 4V
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Vgs (Max): ±10V
  • Input Capacitance (Ciss) (Max) @ Vds: 152 pF @ 10 V
  • FET Feature: -
  • Power Dissipation (Max): 1.25W (Ta)
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TSM
  • Package / Case: TO-236-3, SC-59, SOT-23-3

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