SS2FN6-M3/I
Vishay General Semiconductor - Diodes Division
Vishay General Semiconductor - Diodes Division
DIODE SCHOTTKY 60V 2A DO219AB
$0.07
Available to order
Reference Price (USD)
30,000+
$0.06300
Exquisite packaging
Discount
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Discover high-quality SS2FN6-M3/I Single Rectifier Diodes from Vishay General Semiconductor - Diodes Division, designed for efficient power conversion and reliable performance. These diodes are ideal for a wide range of applications, including power supplies, converters, and inverters. With robust construction and superior thermal management, they ensure long-lasting operation under demanding conditions. Features include low forward voltage drop, high surge current capability, and excellent reverse leakage characteristics. Whether for industrial or consumer electronics, Vishay General Semiconductor - Diodes Division's SS2FN6-M3/I delivers unmatched reliability. Contact us today for more details and to request a quote!
Specifications
- Product Status: Active
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 60 V
- Current - Average Rectified (Io): 2A
- Voltage - Forward (Vf) (Max) @ If: 600 mV @ 2 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 900 µA @ 60 V
- Capacitance @ Vr, F: 100pF @ 4V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: DO-219AB
- Supplier Device Package: DO-219AB (SMF)
- Operating Temperature - Junction: -55°C ~ 150°C
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