SQS462EN-T1_GE3
Vishay Siliconix
Vishay Siliconix
MOSFET N-CH 60V 8A PPAK1212-8
$1.08
Available to order
Reference Price (USD)
3,000+
$0.44280
6,000+
$0.42201
15,000+
$0.40716
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Vishay Siliconix presents SQS462EN-T1_GE3, a high-performance Transistors - FETs, MOSFETs - Single in the Discrete Semiconductor Products category. Designed for efficiency, this component features minimal conduction losses and superior thermal performance, making it ideal for high-frequency applications. From industrial automation to smart home devices, SQS462EN-T1_GE3 delivers unmatched reliability. Get in touch today for technical specifications and purchasing options!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60 V
- Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Rds On (Max) @ Id, Vgs: 63mOhm @ 4.3A, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 470 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 33W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PowerPAK® 1212-8
- Package / Case: PowerPAK® 1212-8
Related Products
STMicroelectronics
STF57N65M5
Toshiba Semiconductor and Storage
TK25S06N1L,LXHQ
Diodes Incorporated
DMN3024LK3-13
STMicroelectronics
STW9NK90Z
onsemi
3LP01S-K-TL-E
Infineon Technologies
IRLML6344TRPBF
NXP USA Inc.
PMN40LN,135
onsemi
NTTFS4C05NTWG
Infineon Technologies
BSF450NE7NH3XUMA1
Micro Commercial Co