SQJ423EP-T1_BE3
Vishay Siliconix
Vishay Siliconix
P-CHANNEL 40-V (D-S) 175C MOSFET
$1.17
Available to order
Reference Price (USD)
1+
$1.17000
500+
$1.1583
1000+
$1.1466
1500+
$1.1349
2000+
$1.1232
2500+
$1.1115
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Upgrade your electronic designs with SQJ423EP-T1_BE3 by Vishay Siliconix, a top-tier choice in Discrete Semiconductor Products. Specifically crafted for Transistors - FETs, MOSFETs - Single applications, this product offers superior power handling and energy efficiency. Key features include high voltage tolerance, minimal power loss, and robust durability, making it perfect for switching and amplification tasks. Whether for industrial machinery, renewable energy systems, or portable devices, SQJ423EP-T1_BE3 ensures reliable operation. Ready to integrate this component into your project? Submit an inquiry now for pricing and availability!
Specifications
- Product Status: Active
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 40 V
- Current - Continuous Drain (Id) @ 25°C: 55A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Rds On (Max) @ Id, Vgs: 14mOhm @ 10A, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 4500 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 68W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PowerPAK® SO-8
- Package / Case: PowerPAK® SO-8
Related Products
onsemi
FDPF10N60NZ
Rohm Semiconductor
RQ5E025ATTCL
Rectron USA
RM3416
Microchip Technology
APT84M50B2
Vishay Siliconix
IRL630SPBF
Vishay Siliconix
SQJQ148ER-T1_GE3
Rohm Semiconductor
R6020KNX
Vishay Siliconix
SQD50N04-5M6_GE3
onsemi
FDMC8554
onsemi