SQJ211ELP-T1_GE3
Vishay Siliconix
Vishay Siliconix
MOSFET P-CH 100V 33.6A PPAK SO-8
$1.67
Available to order
Reference Price (USD)
1+
$1.67000
500+
$1.6533
1000+
$1.6366
1500+
$1.6199
2000+
$1.6032
2500+
$1.5865
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
For cutting-edge Transistors - FETs, MOSFETs - Single solutions, choose SQJ211ELP-T1_GE3 by Vishay Siliconix. A key player in Discrete Semiconductor Products, this MOSFET boasts low RDS(on), high current capacity, and excellent switching characteristics. Its applications span across telecom infrastructure, medical devices, and consumer electronics. Elevate your designs with SQJ211ELP-T1_GE3 inquire now for more details!
Specifications
- Product Status: Active
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100 V
- Current - Continuous Drain (Id) @ 25°C: 33.6A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): -
- Rds On (Max) @ Id, Vgs: 30mOhm @ 8A, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 3800 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 68W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PowerPAK® SO-8
- Package / Case: PowerPAK® SO-8
Related Products
Diodes Incorporated
DMTH4014LPSWQ-13
onsemi
FCP11N60F
Microchip Technology
MSC090SMA070B
Infineon Technologies
IRL3705NSTRLPBF
Infineon Technologies
IPWS65R050CFD7AXKSA1
Renesas Electronics America Inc
2SK1157-E
Vishay Siliconix
SI3483CDV-T1-E3
Nexperia USA Inc.
BUK9M15-40HX
IXYS
IXTP42N25P
Rectron USA