SQJ180EP-T1_GE3
Vishay Siliconix
Vishay Siliconix
AUTOMOTIVE N-CHANNEL 80 V (D-S)
$2.02
Available to order
Reference Price (USD)
1+
$2.02000
500+
$1.9998
1000+
$1.9796
1500+
$1.9594
2000+
$1.9392
2500+
$1.919
Exquisite packaging
Discount
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For cutting-edge Transistors - FETs, MOSFETs - Single solutions, choose SQJ180EP-T1_GE3 by Vishay Siliconix. A key player in Discrete Semiconductor Products, this MOSFET boasts low RDS(on), high current capacity, and excellent switching characteristics. Its applications span across telecom infrastructure, medical devices, and consumer electronics. Elevate your designs with SQJ180EP-T1_GE3 inquire now for more details!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 80 V
- Current - Continuous Drain (Id) @ 25°C: 248A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 3mOhm @ 15A, 10V
- Vgs(th) (Max) @ Id: 3.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 117 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 6645 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 500W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PowerPAK® SO-8
- Package / Case: PowerPAK® SO-8
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