SQ2308CES-T1_BE3
Vishay Siliconix
Vishay Siliconix
MOSFET N-CH 60V 2.3A SOT23-3
$0.70
Available to order
Reference Price (USD)
1+
$0.70000
500+
$0.693
1000+
$0.686
1500+
$0.679
2000+
$0.672
2500+
$0.665
Exquisite packaging
Discount
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For cutting-edge Transistors - FETs, MOSFETs - Single solutions, choose SQ2308CES-T1_BE3 by Vishay Siliconix. A key player in Discrete Semiconductor Products, this MOSFET boasts low RDS(on), high current capacity, and excellent switching characteristics. Its applications span across telecom infrastructure, medical devices, and consumer electronics. Elevate your designs with SQ2308CES-T1_BE3 inquire now for more details!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60 V
- Current - Continuous Drain (Id) @ 25°C: 2.3A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Rds On (Max) @ Id, Vgs: 150mOhm @ 2.3A, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 5.3 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 205 pF @ 30 V
- FET Feature: -
- Power Dissipation (Max): 2W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: SOT-23-3 (TO-236)
- Package / Case: TO-236-3, SC-59, SOT-23-3
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