SPB80P06PGATMA1
Infineon Technologies
Infineon Technologies
MOSFET P-CH 60V 80A TO263-3
$5.13
Available to order
Reference Price (USD)
1,000+
$1.92485
2,000+
$1.82861
5,000+
$1.75986
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Upgrade your electronic designs with SPB80P06PGATMA1 by Infineon Technologies, a top-tier choice in Discrete Semiconductor Products. Specifically crafted for Transistors - FETs, MOSFETs - Single applications, this product offers superior power handling and energy efficiency. Key features include high voltage tolerance, minimal power loss, and robust durability, making it perfect for switching and amplification tasks. Whether for industrial machinery, renewable energy systems, or portable devices, SPB80P06PGATMA1 ensures reliable operation. Ready to integrate this component into your project? Submit an inquiry now for pricing and availability!
Specifications
- Product Status: Active
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60 V
- Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 23mOhm @ 64A, 10V
- Vgs(th) (Max) @ Id: 4V @ 5.5mA
- Gate Charge (Qg) (Max) @ Vgs: 173 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 5033 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 340W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-TO263-3-2
- Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Related Products
Vishay Siliconix
SI4463BDY-T1-E3
Renesas Electronics America Inc
HAT1142R02-EL-E
IXYS
IXFK220N20X3
STMicroelectronics
STL120N8F7
Diodes Incorporated
DMN3042L-7
Renesas Electronics America Inc
RJK60S5DPN-00#T2
Vishay Siliconix
SUD20N10-66L-GE3
Infineon Technologies
IRF1310NSTRLPBF
Diodes Incorporated
DMT10H015LSS-13
Vishay Siliconix