SPA08N50C3
Infineon Technologies
Infineon Technologies
N-CHANNEL POWER MOSFET
$0.75
Available to order
Reference Price (USD)
1+
$0.75000
500+
$0.7425
1000+
$0.735
1500+
$0.7275
2000+
$0.72
2500+
$0.7125
Exquisite packaging
Discount
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For cutting-edge Transistors - FETs, MOSFETs - Single solutions, choose SPA08N50C3 by Infineon Technologies. A key player in Discrete Semiconductor Products, this MOSFET boasts low RDS(on), high current capacity, and excellent switching characteristics. Its applications span across telecom infrastructure, medical devices, and consumer electronics. Elevate your designs with SPA08N50C3 inquire now for more details!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 560 V
- Current - Continuous Drain (Id) @ 25°C: 7.6A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 600mOhm @ 4.6A, 10V
- Vgs(th) (Max) @ Id: 3.9V @ 350µA
- Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 750 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 32W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: PG-TO220-3-111
- Package / Case: TO-220-3 Full Pack
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