SPA02N80C3XKSA1
Infineon Technologies
Infineon Technologies
MOSFET N-CH 800V 2A TO220-FP
$1.82
Available to order
Reference Price (USD)
1+
$1.46000
10+
$1.30200
100+
$1.04290
500+
$0.82422
1,000+
$0.66517
Exquisite packaging
Discount
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Enhance your circuit performance with SPA02N80C3XKSA1, a premium Transistors - FETs, MOSFETs - Single from Infineon Technologies. As part of the Discrete Semiconductor Products lineup, this MOSFET excels in delivering high-speed switching and low power consumption. Its advanced design reduces heat generation and improves efficiency, suitable for power supplies, motor controls, and LED lighting. Trust SPA02N80C3XKSA1 for consistent quality and long-lasting performance. For bulk orders or custom specifications, reach out to our sales team today!
Specifications
- Product Status: Not For New Designs
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 800 V
- Current - Continuous Drain (Id) @ 25°C: 2A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 2.7Ohm @ 1.2A, 10V
- Vgs(th) (Max) @ Id: 3.9V @ 120µA
- Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 290 pF @ 100 V
- FET Feature: -
- Power Dissipation (Max): 30.5W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: PG-TO220-3-31
- Package / Case: TO-220-3 Full Pack
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