SM6S30AHE3_A/I
Vishay General Semiconductor - Diodes Division
Vishay General Semiconductor - Diodes Division
TVS DIODE 30VWM 48.4VC DO218AB
$3.77
Available to order
Reference Price (USD)
750+
$2.25475
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Protect your circuits effortlessly with Vishay General Semiconductor - Diodes Division's SM6S30AHE3_A/I TVS Diodes, designed for high-speed data lines and power applications. These diodes feature excellent clamping performance, low dynamic resistance, and high thermal stability. Suitable for telecom infrastructure, automotive electronics, and more, they ensure reliable operation under stress. Get started with Vishay General Semiconductor - Diodes Division send us your inquiry!
Specifications
- Product Status: Active
- Type: Zener
- Unidirectional Channels: 1
- Bidirectional Channels: -
- Voltage - Reverse Standoff (Typ): 30V
- Voltage - Breakdown (Min): 33.3V
- Voltage - Clamping (Max) @ Ipp: 48.4V
- Current - Peak Pulse (10/1000µs): 95A
- Power - Peak Pulse: 4600W (4.6kW)
- Power Line Protection: No
- Applications: Automotive
- Capacitance @ Frequency: -
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: DO-218AB
- Supplier Device Package: DO-218AB
Related Products
Eaton - Electronics Division
SMCJE14A
Vishay General Semiconductor - Diodes Division
SMAJ6.0CAHE3_A/H
Microchip Technology
M5KP17CAE3
Diodes Incorporated
3.0SMCJ8.0AQ-13
Toshiba Semiconductor and Storage
DF2S20FS,L3M
YAGEO
SMAJ51CA/TR13
YAGEO
SDD32A05L01
Comchip Technology
TV06B640J-G
Central Semiconductor Corp
1SMC70CA TR13 PBFREE
SMC Diode Solutions