SIZ998DT-T1-GE3
Vishay Siliconix
Vishay Siliconix
MOSFET 2 N-CH 30V 8-POWERPAIR
$1.62
Available to order
Reference Price (USD)
3,000+
$0.68530
6,000+
$0.65104
15,000+
$0.62656
Exquisite packaging
Discount
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The SIZ998DT-T1-GE3 by Vishay Siliconix is a standout in the Discrete Semiconductor Products category, specifically for Transistors - FETs, MOSFETs - Arrays. Engineered for excellence, these components offer unmatched reliability and performance. Features such as high voltage tolerance, low gate charge, and superior thermal management make them a preferred choice. Applications range from industrial automation to consumer electronics. Don t miss out on the opportunity to integrate SIZ998DT-T1-GE3 into your systems contact us for more details and pricing.
Specifications
- Product Status: Active
- FET Type: 2 N-Channel (Dual), Schottky
- FET Feature: Standard
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 20A (Tc), 60A (Tc)
- Rds On (Max) @ Id, Vgs: 6.7mOhm @ 15A, 10V, 2.8mOhm @ 19A, 10V
- Vgs(th) (Max) @ Id: 2.2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 8.1nC @ 4.5V, 19.8nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 930pF @ 15V, 2620pF @ 15V
- Power - Max: 20.2W, 32.9W
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-PowerWDFN
- Supplier Device Package: 8-PowerPair® (6x5)
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