SIS902DN-T1-GE3
Vishay Siliconix
Vishay Siliconix
MOSFET 2N-CH 75V 4A PPAK 1212-8
$0.00
Available to order
Reference Price (USD)
1+
$0.00000
500+
$0
1000+
$0
1500+
$0
2000+
$0
2500+
$0
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The SIS902DN-T1-GE3 by Vishay Siliconix is a must-have in the Discrete Semiconductor Products category, specifically for Transistors - FETs, MOSFETs - Arrays. Designed for high-performance applications, these components feature low RDS(on), high power density, and excellent reliability. They are widely used in automotive, aerospace, and industrial electronics. Let Vishay Siliconix s SIS902DN-T1-GE3 be the backbone of your next project contact us for more information and to place your order.
Specifications
- Product Status: Obsolete
- FET Type: 2 N-Channel (Dual)
- FET Feature: Standard
- Drain to Source Voltage (Vdss): 75V
- Current - Continuous Drain (Id) @ 25°C: 4A
- Rds On (Max) @ Id, Vgs: 186mOhm @ 3A, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 6nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 175pF @ 38V
- Power - Max: 15.4W
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: PowerPAK® 1212-8 Dual
- Supplier Device Package: PowerPAK® 1212-8 Dual
Related Products
onsemi
NDC7002N_SB9G007
Vishay Siliconix
SI3993DV-T1-E3
Alpha & Omega Semiconductor Inc.
AO4822L_101
Infineon Technologies
IRF7317PBF
onsemi
NVMFD5852NLT1G
Vishay Siliconix
SQJ962EP-T1-GE3
Vishay Siliconix
SQJ912AEP-T1_GE3
Vishay Siliconix
SI1553DL-T1
Infineon Technologies
IRFH4257DTRPBF
Diodes Incorporated