SIR586DP-T1-RE3
Vishay Siliconix
Vishay Siliconix
N-CHANNEL 80 V (D-S) MOSFET POWE
$1.47
Available to order
Reference Price (USD)
1+
$1.47000
500+
$1.4553
1000+
$1.4406
1500+
$1.4259
2000+
$1.4112
2500+
$1.3965
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Experience the power of SIR586DP-T1-RE3, a premium Transistors - FETs, MOSFETs - Single from Vishay Siliconix. Part of the Discrete Semiconductor Products family, this MOSFET is tailored for high-efficiency power conversion and signal amplification. With its rugged construction and advanced technology, SIR586DP-T1-RE3 is suited for harsh environments and high-demand applications. Request a quote now to secure this essential component for your projects!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 80 V
- Current - Continuous Drain (Id) @ 25°C: 20.7A (Ta), 78.4A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
- Rds On (Max) @ Id, Vgs: 5.8mOhm @ 10A, 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 1905 pF @ 40 V
- FET Feature: -
- Power Dissipation (Max): 5W (Ta), 71.4W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PowerPAK® SO-8
- Package / Case: PowerPAK® SO-8
Related Products
Infineon Technologies
BSC016N04LSGATMA1
onsemi
FQPF8N60C
Vishay Siliconix
SIJH800E-T1-GE3
Vishay Siliconix
SIHA22N60EL-E3
Infineon Technologies
AUIRF9Z34N-INF
Microchip Technology
MSC035SMA170B
Renesas Electronics America Inc
HAT1035R-EL-E
onsemi
FDN338P
Infineon Technologies
IPAN60R600P7SXKSA1
NXP USA Inc.