SIJH600E-T1-GE3
Vishay Siliconix
Vishay Siliconix
N-CHANNEL 60-V (D-S) 175C MOSFET
$6.69
Available to order
Reference Price (USD)
1+
$6.69000
500+
$6.6231
1000+
$6.5562
1500+
$6.4893
2000+
$6.4224
2500+
$6.3555
Exquisite packaging
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Discover SIJH600E-T1-GE3, a versatile Transistors - FETs, MOSFETs - Single solution from Vishay Siliconix, a trusted name in Discrete Semiconductor Products. This MOSFET combines high power density with low on-resistance, perfect for compact and energy-efficient designs. Applications include solar inverters, electric vehicles, and wearable technology. Interested in this innovative component? Send us your inquiry now for more information!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60 V
- Current - Continuous Drain (Id) @ 25°C: 37A (Ta), 373A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
- Rds On (Max) @ Id, Vgs: 0.92Ohm @ 20A, 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 212 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 9950 pF @ 30 V
- FET Feature: -
- Power Dissipation (Max): 3.3W (Ta), 333W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PowerPAK® 8 x 8
- Package / Case: PowerPAK® 8 x 8
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