SIHS36N50D-GE3
Vishay Siliconix
Vishay Siliconix
D SERIES POWER MOSFET SUPER-247,
$6.91
Available to order
Reference Price (USD)
1+
$6.91000
500+
$6.8409
1000+
$6.7718
1500+
$6.7027
2000+
$6.6336
2500+
$6.5645
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Discover high-performance SIHS36N50D-GE3 from Vishay Siliconix, a leading solution in the Discrete Semiconductor Products category. Our Transistors - FETs, MOSFETs - Single are designed for efficiency and reliability, making them ideal for various electronic applications. These components feature low on-resistance, fast switching speeds, and excellent thermal performance, ensuring optimal functionality in power management and amplification circuits. Commonly used in automotive, industrial, and consumer electronics, SIHS36N50D-GE3 delivers consistent performance under demanding conditions. Interested in learning more? Contact us today for a detailed quote and technical support!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 500 V
- Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 130mOhm @ 18A, 10V
- Vgs(th) (Max) @ Id: 5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 125 nC @ 10 V
- Vgs (Max): ±30V
- Input Capacitance (Ciss) (Max) @ Vds: 3233 pF @ 100 V
- FET Feature: -
- Power Dissipation (Max): 446W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-247AC
- Package / Case: TO-247-3
Related Products
Vishay Siliconix
IRFR210TRRPBF
STMicroelectronics
STH410N4F7-2AG
onsemi
FQD3N60CTM-WS
Alpha & Omega Semiconductor Inc.
AOWF11N60
Nexperia USA Inc.
PMV213SN,215
STMicroelectronics
STU10N60M2
Vishay Siliconix
SIRA52DP-T1-GE3
Nexperia USA Inc.
PMPB11R2VPX
Vishay Siliconix
SIHD7N60ET5-GE3
onsemi