SIHP20N50E-GE3
Vishay Siliconix
Vishay Siliconix
MOSFET N-CH 500V 19A TO220AB
$3.08
Available to order
Reference Price (USD)
1+
$3.34000
10+
$3.02100
100+
$2.44630
500+
$1.92376
1,000+
$1.61025
3,000+
$1.50575
5,000+
$1.45350
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
For cutting-edge Transistors - FETs, MOSFETs - Single solutions, choose SIHP20N50E-GE3 by Vishay Siliconix. A key player in Discrete Semiconductor Products, this MOSFET boasts low RDS(on), high current capacity, and excellent switching characteristics. Its applications span across telecom infrastructure, medical devices, and consumer electronics. Elevate your designs with SIHP20N50E-GE3 inquire now for more details!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 500 V
- Current - Continuous Drain (Id) @ 25°C: 19A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 184mOhm @ 10A, 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 92 nC @ 10 V
- Vgs (Max): ±30V
- Input Capacitance (Ciss) (Max) @ Vds: 1640 pF @ 100 V
- FET Feature: -
- Power Dissipation (Max): 179W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220AB
- Package / Case: TO-220-3
Related Products
Micro Commercial Co
SI2300-TP
Vishay Siliconix
SI7328DN-T1-E3
onsemi
FDB045AN08A0
Fairchild Semiconductor
SI6466DQ
NXP USA Inc.
BUK655R0-75C,127
Nexperia USA Inc.
PHK18NQ03LT,518
Rectron USA
RM25N30DN
IXYS
IXFK32N100X
Infineon Technologies
BSC900N20NS3GATMA1
Nexperia USA Inc.