SIHH28N60E-T1-GE3
Vishay Siliconix
Vishay Siliconix
MOSFET N-CH 600V 29A PPAK 8 X 8
$3.79
Available to order
Reference Price (USD)
1+
$7.07000
10+
$6.30900
100+
$5.17300
500+
$4.18884
1,000+
$3.53276
2,500+
$3.35612
Exquisite packaging
Discount
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Optimize your electronic systems with SIHH28N60E-T1-GE3, a high-quality Transistors - FETs, MOSFETs - Single from Vishay Siliconix. This Discrete Semiconductor Products component is built for reliability, featuring enhanced thermal stability and fast response times. Perfect for automotive electronics, power tools, and IoT devices, SIHH28N60E-T1-GE3 provides efficient power management solutions. Contact us today to discuss your requirements and place an order!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600 V
- Current - Continuous Drain (Id) @ 25°C: 29A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 98mOhm @ 14A, 10V
- Vgs(th) (Max) @ Id: 5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 129 nC @ 10 V
- Vgs (Max): ±30V
- Input Capacitance (Ciss) (Max) @ Vds: 2614 pF @ 100 V
- FET Feature: -
- Power Dissipation (Max): 202W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PowerPAK® 8 x 8
- Package / Case: 8-PowerTDFN
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