SIHF840LCS-GE3
Vishay Siliconix
Vishay Siliconix
MOSFET N-CH 500V 8A D2PAK
$0.90
Available to order
Reference Price (USD)
1+
$0.90090
500+
$0.891891
1000+
$0.882882
1500+
$0.873873
2000+
$0.864864
2500+
$0.855855
Exquisite packaging
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Experience the power of SIHF840LCS-GE3, a premium Transistors - FETs, MOSFETs - Single from Vishay Siliconix. Part of the Discrete Semiconductor Products family, this MOSFET is tailored for high-efficiency power conversion and signal amplification. With its rugged construction and advanced technology, SIHF840LCS-GE3 is suited for harsh environments and high-demand applications. Request a quote now to secure this essential component for your projects!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 500 V
- Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 850mOhm @ 4.8A, 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V
- Vgs (Max): ±30V
- Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 3.1W (Ta), 125W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: D²PAK (TO-263)
- Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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