SIHF530-GE3
Vishay Siliconix
Vishay Siliconix
MOSFET N-CH 100V 14A TO220AB
$0.42
Available to order
Reference Price (USD)
1+
$0.41606
500+
$0.4118994
1000+
$0.4077388
1500+
$0.4035782
2000+
$0.3994176
2500+
$0.395257
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Discover high-performance SIHF530-GE3 from Vishay Siliconix, a leading solution in the Discrete Semiconductor Products category. Our Transistors - FETs, MOSFETs - Single are designed for efficiency and reliability, making them ideal for various electronic applications. These components feature low on-resistance, fast switching speeds, and excellent thermal performance, ensuring optimal functionality in power management and amplification circuits. Commonly used in automotive, industrial, and consumer electronics, SIHF530-GE3 delivers consistent performance under demanding conditions. Interested in learning more? Contact us today for a detailed quote and technical support!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100 V
- Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 160mOhm @ 8.4A, 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 670 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 88W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220AB
- Package / Case: TO-220-3
Related Products
Vishay Siliconix
SIHA2N80E-GE3
Infineon Technologies
IPZA65R029CFD7XKSA1
IXYS
IXTA90N075T2-TRL
onsemi
FQP13N06L
Alpha & Omega Semiconductor Inc.
AON7230
Infineon Technologies
IPI023NE7N3G
Diodes Incorporated
DMP3097LQ-7
Texas Instruments
CSD17307Q5A
Fairchild Semiconductor
FDD6632
onsemi