SIGC121T60NR2CX1SA2
Infineon Technologies
Infineon Technologies
IGBT 3 CHIP 600V WAFER
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The SIGC121T60NR2CX1SA2 Single IGBT by Infineon Technologies is a game-changer for energy-efficient systems. Ideal for HVAC, robotics, and power distribution, it boasts fast turn-off times and low gate drive requirements. Its advanced technology reduces energy waste and improves system longevity. Trust Infineon Technologies for premium-quality transistors backed by exceptional support. Request a sample or quote now to start your next innovation!
Specifications
- Product Status: Obsolete
- IGBT Type: NPT
- Voltage - Collector Emitter Breakdown (Max): 600 V
- Current - Collector (Ic) (Max): 150 A
- Current - Collector Pulsed (Icm): 450 A
- Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 150A
- Power - Max: -
- Switching Energy: -
- Input Type: Standard
- Gate Charge: -
- Td (on/off) @ 25°C: 125ns/225ns
- Test Condition: 300V, 150A, 1.5Ohm, 15V
- Reverse Recovery Time (trr): -
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: Die
- Supplier Device Package: Die
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