SIE820DF-T1-GE3
Vishay Siliconix
Vishay Siliconix
MOSFET N-CH 20V 50A 10POLARPAK
$2.42
Available to order
Reference Price (USD)
1+
$2.42000
500+
$2.3958
1000+
$2.3716
1500+
$2.3474
2000+
$2.3232
2500+
$2.299
Exquisite packaging
Discount
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Boost your electronic applications with SIE820DF-T1-GE3, a reliable Transistors - FETs, MOSFETs - Single by Vishay Siliconix. As a leader in Discrete Semiconductor Products, we offer components with low gate charge, high breakdown voltage, and excellent switching performance. Whether for aerospace, robotics, or energy systems, SIE820DF-T1-GE3 meets the highest standards. Contact our team today for expert advice and competitive pricing!
Specifications
- Product Status: Obsolete
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 20 V
- Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
- Rds On (Max) @ Id, Vgs: 3.5mOhm @ 18A, 4.5V
- Vgs(th) (Max) @ Id: 2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 143 nC @ 10 V
- Vgs (Max): ±12V
- Input Capacitance (Ciss) (Max) @ Vds: 4300 pF @ 10 V
- FET Feature: -
- Power Dissipation (Max): 5.2W (Ta), 104W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 10-PolarPAK® (S)
- Package / Case: 10-PolarPAK® (S)
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