SIDR608DP-T1-RE3
Vishay Siliconix
Vishay Siliconix
MOSFET N-CH 45V 51A/208A PPAK
$1.29
Available to order
Reference Price (USD)
1+
$1.29195
500+
$1.2790305
1000+
$1.266111
1500+
$1.2531915
2000+
$1.240272
2500+
$1.2273525
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Enhance your circuit performance with SIDR608DP-T1-RE3, a premium Transistors - FETs, MOSFETs - Single from Vishay Siliconix. As part of the Discrete Semiconductor Products lineup, this MOSFET excels in delivering high-speed switching and low power consumption. Its advanced design reduces heat generation and improves efficiency, suitable for power supplies, motor controls, and LED lighting. Trust SIDR608DP-T1-RE3 for consistent quality and long-lasting performance. For bulk orders or custom specifications, reach out to our sales team today!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 45 V
- Current - Continuous Drain (Id) @ 25°C: 51A (Ta), 208A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Rds On (Max) @ Id, Vgs: 1.2mOhm @ 20A, 10V
- Vgs(th) (Max) @ Id: 2.3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 167 nC @ 10 V
- Vgs (Max): +20V, -16V
- Input Capacitance (Ciss) (Max) @ Vds: 8900 pF @ 20 V
- FET Feature: -
- Power Dissipation (Max): 6.25W (Ta), 104W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PowerPAK® SO-8DC
- Package / Case: PowerPAK® SO-8
Related Products
onsemi
NTTFSC4937NTAG
Rohm Semiconductor
RW4C045BCTCL1
Renesas Electronics America Inc
RJK03C0DPA-WS#J53
Micro Commercial Co
MCAC88N12A-TP
Infineon Technologies
IPDQ60R040S7XTMA1
Vishay Siliconix
SQD30N05-20L_T4GE3
Diodes Incorporated
DMP1070UCA3-7
IXYS
IXTA380N036T4-7-TR
Diodes Incorporated
DMN1053UCP4-7
Micro Commercial Co